P. Chalker

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physics.app-ph2020

Ti alloyed $α$ -Ga $_{2}$ O $_{3}$ : route towards wide band gap engineering

A. Barthel, J. W. Roberts, M. Napari +6

The suitability of Ti as a band gap modifier for $α$ -Ga $_{2}$ O $_{3}$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti $_{2}$ O $_{3}$ a…

physics.app-ph2019

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

J. W. Roberts, P. R. Chalker, B. Ding +7

Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate te…

Ti alloyed α-Ga2​O3​: route towards wide band gap engineering

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Ti alloyed $α$ -Ga $_{2}$ O $_{3}$ : route towards wide band gap engineering