P. Chalker

collaborators

3 papers

physics.app-ph2020

Ti alloyed $α$ -Ga $_{2}$ O $_{3}$ : route towards wide band gap engineering

A. Barthel, J. W. Roberts, M. Napari +6

The suitability of Ti as a band gap modifier for $α$ -Ga $_{2}$ O $_{3}$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti $_{2}$ O $_{3}$ a…

cond-mat.mtrl-sci2020

Influence of Polymorphism on the Electronic Structure of Ga $_{2}$ O $_{3}$

Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga $_{2}$ O $_{3}$ has emerged as an altern…

physics.app-ph2019

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

J. W. Roberts, P. R. Chalker, B. Ding +7

Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate te…

Ti alloyed α-Ga2​O3​: route towards wide band gap engineering

Influence of Polymorphism on the Electronic Structure of Ga2​O3​

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Ti alloyed $α$ -Ga $_{2}$ O $_{3}$ : route towards wide band gap engineering

Influence of Polymorphism on the Electronic Structure of Ga $_{2}$ O $_{3}$