Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors

A. Juillard, J. Billard, D. Chaize +11

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance…