activity
20192026
most citedEXCESS workshop: Descriptions of rising low-energy spectra

99 citations · 177 across the 9 of their papers we have counts for

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6 papers · 1 filter

physics.ins-det2026

Characterization of Aluminum Microwave SQUID Multiplexers for CENS Detection

James Amidei, Antoine Armatol, Corinne Augier +92

We present the design, fabrication, and characterization of an aluminum-based six-channel microwave SQUID multiplexer (MUX) prototype for transition-edge sensor (TES) readout in…

physics.ins-det2023★ 18 cited

Results from a Prototype TES Detector for the Ricochet Experiment

Ricochet Collaboration, C. Augier, G. Baulieu +88

Coherent elastic neutrino-nucleus scattering (CENS) offers valuable sensitivity to physics beyond the Standard Model. The Ricochet experiment will use cryogenic solid-state dete…

physics.ins-det2021★ 7 cited

Optimization and performance of the CryoCube detector for the future RICOCHET low-energy neutrino experiment

T. Salagnac, J. Billard, J. Colas +12

The RICOCHET reactor neutrino observatory is planned to be installed at Institut Laue-Langevin starting in mid-2022. The scientific goal of the RICOCHET collaboration is to perform…

physics.ins-det2021

Ricochet Progress and Status

Ricochet Collaboration, G. Beaulieu, V. Belov +77

We present an overview of recent progress towards the Ricochet coherent elastic neutrino nucleus scattering CENS experiment. The ILL research reactor in Grenoble, France has bee…

physics.ins-det2021

HEMT-based 1K front-end electronics for the heat and ionization Ge CryoCube of the future RICOCHET CENS experiment

G. Baulieu, J. Billard, G. Bres +20

The RICOCHET reactor neutrino observatory is planned to be installed at the Laue Langevin Institute (ILL) starting mid-2022. Its scientific goal is to perform a low-energy and high…

physics.ins-det2019★ 20 cited

Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors

A. Juillard, J. Billard, D. Chaize +11

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance…