40 citations · 78 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2010★ 8 cited
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Bilal Gokce, David E. Aspnes, Gerald Lucovsky +1
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidat…
cond-mat.mtrl-sci2010
Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si
B. Gokce, E. J. Adles, D. E. Aspnes +1
Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly neces…