activity
20102021
most citedOxynitride Thin Films versus Particle-Based Photoanodes: a Comparative Study for Photoelectrochemical Solar Water Splitting

40 citations · 78 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2021

Controlling the oxidation of magnetic and electrically conductive solid-solution iron-rhodium nanoparticles synthesized by Laser Ablation in Liquids

Ruksan Nadarajah, Shabbir Tahir, Joachim Landers +11

This study focuses on the synthesis of FeRh nanoparticles via pulsed laser ablation in liquid and on controlling the oxidation of the synthesized nanoparticles. Formation of monomo…

cond-mat.mtrl-sci2019★ 30 cited

Second harmonic generation as a probe of broken mirror symmetry

Bryan T. Fichera, Anshul Kogar, Linda Ye +4

The notion of spontaneous symmetry breaking has been used to describe phase transitions in a variety of physical systems. In crystalline solids, the breaking of certain symmetries,…

physics.app-ph2019★ 40 cited

Oxynitride Thin Films versus Particle-Based Photoanodes: a Comparative Study for Photoelectrochemical Solar Water Splitting

Fatima Haydous, Max Döbeli, Wenping Si +7

The solar water splitting process assisted by semiconductor photocatalysts attracts growing research interests worldwide for the production of hydrogen as a clean and sustainable e…

cond-mat.mtrl-sci2011

The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Bilal Gokce, Daniel B. Dougherty, Kenan Gundogdu

Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the rea…

cond-mat.mtrl-sci2010★ 8 cited

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Bilal Gokce, David E. Aspnes, Gerald Lucovsky +1

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidat…

cond-mat.mtrl-sci2010

Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si

B. Gokce, E. J. Adles, D. E. Aspnes +1

Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly neces…