activity
20132026
most citedSkyrmions in the moiré of van der Waals 2D magnets

266 citations · 373 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026

Cold source field-effect transistor with type-III band-aligned HfS/WTe heterostructure

Shujin Guo, Qing Shi, Deping Guo +4

The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Exi…

cond-mat.mes-hall2021★ 23 cited

Dirac-Source Diode with Sub-unity Ideality Factor

Gyuho Myeong, Wongil Shin, Seungho Kim +10

An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative…

cond-mat.mes-hall2019★ 60 cited

Sub-60 mV/decade switching with a cold metal as the injection source

Fei Liu

Power dissipation is a great challenge for the continuous scaling down and performance improvement of CMOS technology, due to thermionic current switching limit of conventional MOS…

cond-mat.mes-hall2018★ 266 cited

Skyrmions in the moiré of van der Waals 2D magnets

Qingjun Tong, Fei Liu, Jiang Xiao +1

We explore the skyrmion formation and control possibilities in 2D magnets from the ubiquitous moiré pattern in vdW heterostructures. Using the example of a ferromagnetic monolayer…

cond-mat.mes-hall2016★ 22 cited

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Fei Liu, Jian Wang, Hong Guo

Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a gr…

cond-mat.mes-hall2013★ 2 cited

Improved Performance of Tunneling FET Based on Hetero Graphene Nanoribbons

Fei Liu, Xiaoyan Liu, Jinfeng Kang +1

A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real spac…

cond-mat.mes-hall2013

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

Fei Liu, Yahua Peng, Xiaoyan Liu +2

A tunneling field effect transistor based on armchair graphene nanoribbons is studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's fun…