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cond-mat.mtrl-sci2025
Origin of shallow n-type doping in AlN and Al-rich AlGaN
Yujie Liu, Sieun Chae, Emmanouil Kioupakis
Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electr…
cond-mat.mtrl-sci2025
Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers
Sieun Chae, Nocona Sanders, Kelsey A. Mengle +8
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classif…