activity
20182025
most citedRutile GeO2: an ultrawide-band-gap semiconductor with ambipolar doping

103 citations · 311 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2025

Origin of shallow n-type doping in AlN and Al-rich AlGaN

Yujie Liu, Sieun Chae, Emmanouil Kioupakis

Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electr…

cond-mat.mtrl-sci2025

Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers

Sieun Chae, Nocona Sanders, Kelsey A. Mengle +8

The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classif…

cond-mat.mtrl-sci2021★ 7 cited

Cation-size mismatch as a predictive descriptor for structural distortion, configurational disorder, and valence-band splitting in II-IV-N semiconductors

Malhar Kute, Zihao Deng, Sieun Chae +1

The II-IV-N class of heterovalent ternary nitrides have gained significant interest as alternatives to the III-nitrides for electronic and optoelectronic applications. In this…

cond-mat.mtrl-sci2021★ 73 cited

Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO

S. Chae, K. A. Mengle, K. Bushick +8

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric…

cond-mat.mtrl-sci2019

Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility

Kyle Bushick, Sieun Chae, Zihao Deng +2

BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investiga…

cond-mat.mtrl-sci2019★ 71 cited

Quasiparticle band structure and optical properties of rutile GeO, an ultra-wide-band-gap semiconductor

Kelsey A. Mengle, Sieun Chae, Emmanouil Kioupakis

Rutile GeO is a visible and near-ultraviolet-transparent oxide that has not been explored for semiconducting applications in electronic and optoelectronic devices. We investiga…