activity
20122024
most citedGate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

194 citations · 779 across the 19 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2023★ 14 cited

Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide

Haozhe Yang, Maider Ormaza, Zhendong Chi +10

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect…

cond-mat.mes-hall2023★ 11 cited

Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films

M. Xochitl Aguilar-Pujol, Sara Catalano, Carmen González-Orellana +7

A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on YFeO (YIG) an…

cond-mat.mes-hall2022★ 34 cited

Omnidirectional spin-to-charge conversion in graphene/NbSe van der Waals heterostructures

Josep Ingla-Aynés, Inge Groen, Franz Herling +6

The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symm…

cond-mat.mes-hall2022★ 9 cited

Spin Hall magnetoresistance effect from a disordered interface

Sara Catalano, Juan M. Gomez-Perez, M. Xochitl Aguilar-Pujol +4

The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetiz…

cond-mat.mes-hall2022★ 194 cited

Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

Francesco Calavalle, Manuel Suárez-Rodríguez, Beatriz Martín-García +10

Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have b…

cond-mat.mes-hall2021★ 32 cited

Multiscale charge transport in van der Waals thin films: reduced graphene oxide as case study

Alessandro Kovtun, Andrea Candini, Anna Vianelli +9

Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature o…

cond-mat.mes-hall2019★ 123 cited

Absence of ferromagnetism in VSe caused by its charge density wave phase

Adolfo O. Fumega, M. Gobbi, P. Dreher +10

How magnetism emerges in low-dimensional materials such as transition metal dichalcogenides at the monolayer limit is still an open question. Herein, we present a comprehensive stu…

cond-mat.mes-hall2014★ 67 cited

Impurity-assisted tunneling magnetoresistance under weak magnetic field

Oihana Txoperena, Yang Song, Lan Qing +4

Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferrom…

cond-mat.mes-hall2012★ 49 cited

How reliable are Hanle measurements in metals in a three-terminal geometry?

Oihana Txoperena, Marco Gobbi, Amilcar Bedoya-Pinto +4

We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behav…