503 citations · 663 across the 16 of their papers we have counts for
16 papers
CRAM-ER: Error-Resilient Spintronic Computational Random Access Memory for Scalable In-Memory Computation
Sohan Salahuddin Mugdho, Md. Shahedul Hasan, Brahmdutta Dixit +3
Deep neural networks (DNNs) have achieved state-of-the-art performance across diverse domains. However, typical Von Neumann compute paradigms face severe memory bottlenecks. Emergi…
Modulation of switching dynamics in magnetic tunnel junctions for low-error-rate computational random-access memory
Yang Lv, Brahmdutta Dixit, Jian-Ping Wang
The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and…
Demonstration of Electron-Mediated Voltage-Controlled Exchange Coupling in Perpendicular Magnetic Tunnel Junctions
Qi Jia, Yu-Chia Chen, Delin Zhang +8
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection.…
Energy Efficient Stochastic Signal Manipulation in Superparamagnetic Tunnel Junctions via Voltage-Controlled Exchange Coupling
Qi Jia, Onri J. Benally, Brandon Zink +8
Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Co…
Experimental demonstration of magnetic tunnel junction-based computational random-access memory
Yang Lv, Brandon R. Zink, Robert P. Bloom +9
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power an…
Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn
Yihong Fan, Zach Cresswell, Yifei Yang +7
Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel…
Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal
Delin Zhang, Wei Jiang, Hwanhui Yun +11
Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states…
Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers
Yihong Fan, Pengxiang Zhang, Jiahao Han +3
Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferro…
On Error Correction for Nonvolatile Processing-In-Memory
Hüsrev Cılasun, Salonik Resch, Zamshed I. Chowdhury +6
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerg…
Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling
Delin Zhang, Mukund Bapna, Wei Jiang +10
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-contro…
Experimental Demonstration of Probabilistic Spin Logic by Magnetic Tunnel Junctions
Yang Lv, Robert P. Bloom, Jian-Ping Wang
The recently proposed probabilistic spin logic presents promising solutions to novel computing applications. Multiple cases of implementations, including invertible logic gate, hav…
Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
Yang Lv, James Kally, Tao Liu +4
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the conte…
L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions
De-Lin Zhang, Congli Sun, Yang Lv +5
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic m…
Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material
Mahendra DC, Mahdi Jamali, Jun-Yang Chen +9
The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We…
Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures
Yang Lv, James Kally, Delin Zhang +4
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate…
Room Temperature Spin Pumping in Topological Insulator Bi2Se3
Mahdi Jamali, Joon Sue Lee, Yang Lv +3
Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentiall…