activity
20192025
most citedField-free spin-orbit torque switching in Co/Pt/Co multilayer with mixed magnetic anisotropies

43 citations · 83 across the 5 of their papers we have counts for

collaborators

8 papers

physics.app-ph2025

Reinforcement learning for spin torque oscillator tasks

Jakub Mojsiejuk, Sławomir Ziętek, Witold Skowroński

We address the problem of automatic synchronisation of the spintronic oscillator (STO) by means of reinforcement learning (RL). A numerical solution of the macrospin Landau-Lifschi…

cond-mat.mes-hall2021

Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness

Piotr Ogrodnik, Krzysztof Grochot, Łukasz Karwacki +6

The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to contr…

cs.ET2021

Multi-state MRAM cells for hardware neuromorphic computing

Piotr Rzeszut, Jakub Chęciński, Ireneusz Brzozowski +3

Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential app…

physics.app-ph2019

Microwave magnetic field modulation of spin torque oscillator based on perpendicular magnetic tunnel junctions

Witold Skowroński, Jakub Chęciński, Sławomir Ziętek +2

Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive l…

cond-mat.mtrl-sci2019

Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets

Piotr Ogrodnik, Jarosław Kanak, Maciej Czapkiewicz +7

In this work, we comprehensively investigate and discuss the structural, magnetostatic, dynamic, and magnetoresistive properties of epitaxial Co/Mo superlattices. The magnetization…

physics.app-ph201910 cited

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Piotr Rzeszut, Witold Skowroński, Sławomir Ziętek +2

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage densit…