High quality Al${}_{0.37}$In${}_{0.63}$N layers grown at low temperature (<300${}^{\circ }$C) by radio-frequency sputtering

A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3

High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…