D. Montero

activity

20182025

x \sim

0-0.56) Al

_{x}

_{1 - x}

N layers deposited on Si(100) by radio-frequency sputtering

13 citations · 21 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2025★ 13 cited

Low-to-mid Al content ( $x \sim$ 0-0.56) Al $_{x}$ In $_{1 - x}$ N layers deposited on Si(100) by radio-frequency sputtering

R. Blasco, S. Valdueza-Felip, D. Montero +3

Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the ef…

physics.app-ph2019★ 8 cited

High quality Al $_{0.37}$ In $_{0.63}$ N layers grown at low temperature (<300 $^{\circ}$ C) by radio-frequency sputtering

A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3

High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…

physics.app-ph2018

Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering

S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8

We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…

Low-to-mid Al content (x∼ 0-0.56) Alx​In1−x​N layers deposited on Si(100) by radio-frequency sputtering

High quality Al0.37​In0.63​N layers grown at low temperature (<300∘C) by radio-frequency sputtering

Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering

Low-to-mid Al content ( $x \sim$ 0-0.56) Al $_{x}$ In $_{1 - x}$ N layers deposited on Si(100) by radio-frequency sputtering

High quality Al $_{0.37}$ In $_{0.63}$ N layers grown at low temperature (<300 $^{\circ}$ C) by radio-frequency sputtering