7 citations · 18 across the 9 of their papers we have counts for
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Anup Kumar Mandia, Bhaskaran Muralidharan, Seung Cheol Lee +1
High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of…