activity
20182023
most citedAb-initio semi-classical electronic transport in ZnSe: The role of inelastic scattering mechanisms

7 citations · 18 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2023

Magneto-transport in the monolayer MoS2 material system for high-performance field-effect transistor applications

Anup Kumar Mandia, Rohit Kumar, Seung-Cheol Lee +2

Electronic transport in monolayer MoS2 is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. Our paper aims to…

cond-mat.mtrl-sci2023

High-frequency complex impedance analysis of the two-dimensional semiconducting MXene-

Anup Kumar Mandia, Rohit Kumar, Namitha Anna Koshi +3

The two-dimensional compound group of MXenes, which exhibit unique optical, electrical, chemical, and mechanical properties, are an exceptional class of transition metal carbides a…

cond-mat.mtrl-sci2023★ 6 cited

Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors

Rohit Kumar, Anup Kumar Mandia, Anuja Singh +1

In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the…

cond-mat.mtrl-sci2022

Can magneto-transport properties provide insight into the functional groups in semiconducting MXenes?

Namitha Anna Koshi, Anup Kumar Mandia, Bhaskaran Muralidharan +2

The Hall scattering factor of Sc2CF2, Sc2CO2 and Sc2C(OH)2 is calculated using Rode's iterative approach by solving the Boltzmann transport equation. This is carried out in conjunc…

cond-mat.mtrl-sci2022

Electrical and magneto transport in 2D semiconducting MXene Ti2CO2

Anup Kumar Mandia, Namitha Anna Koshi, Bhaskaran Muralidharan +2

The Hall scattering factor is formulated using Rode's iterative approach to solving the Boltzmann transport equation in such a way that it may be easily computed within the scope o…

cond-mat.mtrl-sci2020

Comprehensive studies on steady-state and transient electronic transport in In0.52Al0.48As

Anup Kumar Mandia, Bhaskaran Muralidharan, Seung Cheol Lee +1

High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of…

cond-mat.mtrl-sci2019★ 4 cited

Semi-classical electronic transport properties of ternary compound AlGaAs: Role of different scattering mechanisms

Soubhik Chakrabarty, Anup Kumar Mandia, Bhaskaran Muralidharan +2

We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have…

cond-mat.mtrl-sci2019★ 1 cited

AMMCR: Ab-initio model for mobility and conductivity calculation by using Rode Algorithm

Anup Kumar Mandia, Bhaskaran Muralidharan, Jung-Hae Choi +2

We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derive…

cond-mat.mtrl-sci2018★ 7 cited

Ab-initio semi-classical electronic transport in ZnSe: The role of inelastic scattering mechanisms

Anup Kumar Mandia, Renuka Patnaik, Bhaskaran Muralidharan +2

We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and po…