50 citations · 50 across the 2 of their papers we have counts for
3 papers
Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures
N. A. Sanford, P. T. Blanchard, M. D. Brubaker +6
Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compar…
Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam +4
We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are character…
MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures
Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley +3
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure…