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most citedRoom Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

776 citations · 1.1k across the 8 of their papers we have counts for

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cond-mat.mtrl-sci2018★ 776 cited

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

Dante J. O'Hara, Tiancong Zhu, Amanda H. Trout +9

Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferr…

cond-mat.mtrl-sci2016★ 81 cited

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6

Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…

cond-mat.mtrl-sci2015★ 75 cited

Layer-Transferred MoS2/GaN PN Diodes

Edwin W. Lee, Choong Hee Lee, Pran K. Paul +6

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Dev…

cond-mat.mtrl-sci2014★ 64 cited

Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

Lu Ma, Digbijoy N. Nath, Edwin W. Lee +4

We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter lengt…

cond-mat.mtrl-sci2014★ 1 cited

Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

Edwin W. Lee, Lu Ma, Digbijoy N. Nath +3

The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was…

cond-mat.mtrl-sci2013

p-type doping in CVD grown MoS2 using Nb

M. Laskar, D. N. Nath, L. Ma +12

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient…