48 citations · 121 across the 5 of their papers we have counts for
6 papers
Roadmap for focused ion beam technologies
Katja Höflich, Gerhard Hobler, Frances I. Allen +29
The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was or…
Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
Xiaomo Xu, Thomas Prüfer, Daniel Wolf +8
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite.…
Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm
Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller +6
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne beam. The morphological changes due to ion beam irradiation at room…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…
Nanopatterning of Si surfaces by normal incident ion erosion: influence of metal incorporation on surface morphology evolution
Jing Zhou, Stefan Facsko, Ming Lu +1
The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patt…
Multi-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology
T. Müller, C. Bonafos, K. -H. Heinig +9
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabric…