15 citations · 15 across the 1 of their papers we have counts for
3 papers
Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
Xiaomo Xu, Thomas Prüfer, Daniel Wolf +8
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite.…
Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm
Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller +6
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne beam. The morphological changes due to ion beam irradiation at room…
CMOS-compatible controlled hyperdoping of silicon nanowires
Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…