63 citations · 161 across the 14 of their papers we have counts for
14 papers
Layer-parity-dependent interfacial coupling in NbCl/graphene van der Waals heterostructures
Hansheng Xu, Yuchen Gao, Xinyue Huang +8
Strongly correlated two-dimensional systems provide compelling platforms for investigating exotic quantum phenomena. Niobium chloride (NbCl), a single-band Mott insulator,…
Polarized electroluminescence with magnetic spectral tuning in van der Waals magnet CrSBr
Yilei Wang, Shiqi Yang, Leyan Huang +7
Polarized wavelength-tunable electroluminescence (EL) represents a critical on-demand functionality for next-generation optoelectronics. While conventional van der Waals (vdW) EL d…
Spin texture and tunneling magnetoresistance in atomically thin CrSBr
Ziqi Liu, Yichang Sun, Chengfeng Zhu +9
The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, is of paramount significa…
Intrinsic localized excitons in MoSe/CrSBr heterostructures
Xinyue Huang, Zhigang Song, Yuchen Gao +6
We present a comprehensive investigation of optical properties in MoSe/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission featur…
Defect-Assisted Domain Nucleation Drives Unique Exchange Bias Phenomena in
Shiqi Yang, Xiaolong Xu, Yuchen Gao +7
The study of the mechanism of exchange bias phenomena and the achievement of its efficient control are of great importance, as it promotes the revelation of unique exchange interac…
Constructing the Fulde-Ferrell-Larkin-Ovchinnikov state in antiferromagnetic insulator CrOCl
Yifan Ding, Jiadian He, Shihao Zhang +17
Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties.…
Controlling the 2D magnetism of CrBr by van der Waals stacking engineering
Shiqi Yang, Xiaolong Xu, Bo Han +9
The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals…
Probing the Anomalous Hall Transport and Magnetic Reversal of Chiral-Lattice Antiferromagnet CoNbS
Pingfan Gu, Yuxuan Peng, Shiqi Yang +7
Antiferromagnets exhibiting giant anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) have recently aroused broad interest, not only for their potential applications in f…
Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect
Pingfan Gu, Cong Wang, Dan Su +8
A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freed…
Electrically pumped polarized exciton-polaritons in a halide perovskite microcavity
Tingting Wang, Zhihao Zang, Yuchen Gao +7
Exciton polaritons, hybrid quasiparticles with part-light part-matter nature in semiconductor microcavities, are extensively investigated for striking phenomena such as polariton c…
Realization of graphene logics in an exciton-enhanced insulating phase
Kaining Yang, Xiang Gao, Yaning Wang +15
For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Ye…
Quantum Hall phase in graphene engineered by interfacial charge coupling
Yaning Wang, Xiang Gao, Kaining Yang +18
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimens…
Ultra-efficient magnetism modulation in a Weyl ferromagnet by current-assisted domain wall motion
Qiuyuan Wang, Yi Zeng, Kai Yuan +10
Flexible and efficient manipulation of magnetic configurations can be challenging. In the design of practical devices, achieving a high effective magnetic field with a low working…
Observation of Fano resonance in photoluminescence of a two-dimensional magnetic semiconductor
Pingfan Gu, Qinghai Tan, Yi Wan +10
Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete st…