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cond-mat.mtrl-sci2015★ 11 cited
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
Carina B. Maliakkal, A. Azizur Rahman, Nirupam Hatui +3
Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with tr…
cond-mat.mtrl-sci2010★ 7 cited
Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN
Masihhur R. Laskar, Abdul Kadir, A. A. Rahman +4
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously la…