34 citations · 82 across the 4 of their papers we have counts for
4 papers
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors
Athith Krishna, Aditya Raj, Nirupam Hatui +2
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were…
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment
Athith Krishna, Aditya Raj, Nirupam Hatui +4
To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the fi…
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
Carina B. Maliakkal, A. Azizur Rahman, Nirupam Hatui +3
Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with tr…
Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN
Masihhur R. Laskar, Abdul Kadir, A. A. Rahman +4
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously la…