32 citations · 68 across the 14 of their papers we have counts for
6 papers · 1 filter
Overcoming Labelled Data Scarcity for Defect Classification in Scanning Tunneling Microscopy
Nikola L. Kolev, Max Trouton, Filippo Federici Canova +4
Scanning tunnelling microscopy (STM) is a powerful technique for imaging surfaces with atomic resolution, providing insight into physical and chemical processes at the level of sin…
Hydrogen Passivation Effects on Spatially Resolved Charge Trap Densities in Si(100)-SiO
Adam J. Czarnecki, Nikola L. Kolev, Patrick See +5
As silicon-based devices continue to shrink to the nanoscale, traps at the Si-SiO interface pose increasing challenges to device performance. These traps reduce channel carrier…
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…
Spatially resolved dielectric loss at the Si/SiO interface
Megan Cowie, Taylor J. Z. Stock, Procopios C. Constantinou +2
The Si/SiO interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-base…
Room temperature donor incorporation for quantum devices: arsine on germanium
Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow +3
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, ef…