32 citations · 68 across the 14 of their papers we have counts for
15 papers
Generative Image Restoration and Super-Resolution using Physics-Informed Synthetic Data for Scanning Tunneling Microscopy
Nikola L. Kolev, Tommaso Rodani, Neil J. Curson +2
Scanning tunnelling microscopy (STM) enables atomic-resolution imaging and atom manipulation, but its utility is often limited by tip degradation and slow serial data acquisition.…
Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
Nicolò D'Anna, Jamie Bragg, Aidan G. McConnell +12
Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candida…
Overcoming Labelled Data Scarcity for Defect Classification in Scanning Tunneling Microscopy
Nikola L. Kolev, Max Trouton, Filippo Federici Canova +4
Scanning tunnelling microscopy (STM) is a powerful technique for imaging surfaces with atomic resolution, providing insight into physical and chemical processes at the level of sin…
Hydrogen Passivation Effects on Spatially Resolved Charge Trap Densities in Si(100)-SiO
Adam J. Czarnecki, Nikola L. Kolev, Patrick See +5
As silicon-based devices continue to shrink to the nanoscale, traps at the Si-SiO interface pose increasing challenges to device performance. These traps reduce channel carrier…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Element-specific, non-destructive profiling of layered heterostructures
Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata +16
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightfor…
Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
Megan Cowie, Procopios C. Constantinou, Neil J. Curson +2
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state fluctuations are localize…
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…
Resistless EUV lithography: photon-induced oxide patterning on silicon
Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis +7
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading litho…
Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11
Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…
Spatially resolved dielectric loss at the Si/SiO interface
Megan Cowie, Taylor J. Z. Stock, Procopios C. Constantinou +2
The Si/SiO interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-base…
Are high-energy photoemission final states free-electron-like?
V. N. Strocov, L. L. Lev, F. Alarab +6
Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, inter…
Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon +11
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen r…
Room temperature donor incorporation for quantum devices: arsine on germanium
Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow +3
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, ef…
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +8
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resis…