82 citations · 83 across the 5 of their papers we have counts for
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Gate-Controllable Quadri-Layertronics in 2D Multiferroic Antiferromagnet
Ting Zhang, Mingsheng Wang, Xilong Xu +2
Layertronics that manifests layer Hall effect is typically considered to intrinsically possess binary physics. Using symmetry arguments and a low-energy kp model, we show that the…
Ferroelectric metals in van der Waals bilayers
Jiagang Zhang, Ting Zhang
The combination of metallicity and ferroelectricity breaks traditional boundaries, paving new avenues for innovative electronic materials and devices. This breakthrough is particul…
Intrinsic Layer-Polarized Anomalous Hall Effect in Bilayer MnBi2Te4
Rui Peng, Ting Zhang, Zhonglin He +4
Layer-polarized anomalous Hall effect (LP-AHE) is an attractive phenomenon in condensed-matter physics from the standpoints of both fundamental interest and device applications. Th…
Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers
Ting Zhang, Xilong Xu, Baibiao Huang +3
Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and dev…
Two-dimensional ferroelastic semiconductors in Nb2SiTe4 and Nb2GeTe4 with promising electronic properties
Ting Zhang, Yandong Ma, Xilong Xu +3
Two-dimensional crystals with coupling of ferroelasticity and attractive electronic properties offer unprecedent opportunities for achieving long-sought controllable devices. But s…