Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

S. Fernández-Garrido, A. Redondo-Cubero, R. Gago +7

Indium incorporation into wurtzite (0001)-oriented In${}_x$Al${}_y$Ga${}_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temp…