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cond-mat.mtrl-sci2022
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
cond-mat.mtrl-sci2021★ 26 cited
Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy
Diego de Matteis, Marta De Luca, Elham M. T. Fadaly +5
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pr…