26 citations · 26 across the 2 of their papers we have counts for
5 papers
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy
Diego de Matteis, Marta De Luca, Elham M. T. Fadaly +5
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pr…
Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
E. M. T. Fadaly, A. Dijkstra, J. R. Suckert +16
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge)…
Observation of Conductance Quantization in InSb Nanowire Networks
Elham M. T. Fadaly, Hao Zhang, Sonia Conesa-Boj +7
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit…
InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Diana Car, Sonia Conesa-Boj, Hao Zhang +12
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation…