26 citations · 50 across the 6 of their papers we have counts for
4 papers · 1 filter
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek +8
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitax…
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…
Highly efficient optical transition between excited states in wide InGaN quantum wells
Grzegorz Muziol, Henryk Turski, Marcin Siekacz +6
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet…