activity
20182024
most citedEnhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

26 citations · 50 across the 6 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

1 paper · 1 filter

cond-mat.mtrl-sci2024★ 5 cited

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

J. Moneta, M. Krysko, J. Z. Domagala +5

Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-conten…