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20112019
most citedStacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

506 citations · 592 across the 7 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2019★ 16 cited

Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene

Yongjin Lee, Shi Che, Jairo Velasco +6

Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…

cond-mat.mes-hall2014

Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene

Y. Lee, D. Tran, K. Myhro +6

Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital p…

cond-mat.mes-hall2014★ 28 cited

Distinct Competing Ordered ν=2 States in Bilayer Graphene

J. Velasco, Y. Lee, Fan Zhang +6

Because of its large density-of-states and the 2π Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to c…

cond-mat.mes-hall2014★ 2 cited

Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene

Y. Lee, D. Tran, K. Myhro +7

Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can…

cond-mat.mes-hall2012★ 40 cited

Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene

Yongjin Lee, Jairo Velasco, David Tran +6

We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2,…

cond-mat.mes-hall2011★ 506 cited

Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

W. Bao, L. Jing, Y. Lee +11

In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different…