506 citations · 592 across the 7 of their papers we have counts for
7 papers
Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene
Yongjin Lee, Shi Che, Jairo Velasco +6
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…
Multicomponent Quantum Hall Ferromagnetism and Landau Level Crossing in Rhombohedral Trilayer Graphene
Y. Lee, D. Tran, K. Myhro +6
Using transport measurements, we investigate multicomponent quantum Hall (QH) ferromagnetism in dual-gated rhombohedral trilayer graphene (r-TLG), in which the real spin, orbital p…
Distinct Competing Ordered ν=2 States in Bilayer Graphene
J. Velasco, Y. Lee, Fan Zhang +6
Because of its large density-of-states and the 2π Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to c…
Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene
Y. Lee, D. Tran, K. Myhro +7
Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can…
Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies
Hang Zhang, Jhao-Wun Huang, Jairo Velasco +9
We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mo…
Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
Yongjin Lee, Jairo Velasco, David Tran +6
We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2,…
Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
W. Bao, L. Jing, Y. Lee +11
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different…