activity
20192022
most citedOptically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

3 citations · 5 across the 3 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2022

Atomically localized ingredient-dependent interface phonon in heterogeneous solids

Mei Wu, Ruochen Shi, Ruishi Qi +12

Phonons are the primary heat carriers in non-metallic solids. In compositionally heterogeneous materials, the thermal properties are believed to be mainly governed by the disrupted…

cond-mat.mes-hall20213 cited

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Yanchong Zhao, Luojun Du, Shiqi Yang +13

Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applicati…

cond-mat.mtrl-sci20212 cited

Manipulation of polar vortex chirality in oxide superlattices

Pan Chen, Congbing Tan, Zhexin Jiang +18

Topological polar vortices that are the electric analogues of magnetic objects, present great potential in applications of future nanoelectronics due to their nanometer size, anoma…

cond-mat.mtrl-sci2019

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux-closure

Xiaomei Li, Congbing Tan, Peng Gao +12

The ability to controllably manipulate the complex topological polar configurations, such as polar flux-closure via external stimuli, enables many applications in electromechanical…

cond-mat.mtrl-sci2019

Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary

Xujing Li, Li Yin, Zhengxun Lai +14

Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the prop…

cond-mat.mtrl-sci2019

Atomic-environment-dependent thickness of ferroelastic domain walls

Mingqiang Li, Xiaomei Li, Yuehui Li +3

Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroel…