Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary

Abstract

Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides due to the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8° SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance is because of the dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

arXiv comment26 pages,4 figures

References in corpus (5)

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• Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure
• Transport Properties, Thermodynamic Properties, and Electronic Structure of SrRuO3
• Large two-level magnetoresistance effect in doped manganite grain boundary junctions
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Cited by in corpus (2)

• Engineering of Atomic-Scale Flexoelectricity at Grain Boundaries
• Materials challenges for SrRuO3: from conventional to quantum electronics