103 citations · 665 across the 10 of their papers we have counts for
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Optical properties of cubic boron arsenide
Bai Song, Ke Chen, Kyle Bushick +6
The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical pro…
Electron and hole mobility of rutile GeO from first principles: an ultrawide-band-gap semiconductor for power electronics
Kyle Bushick, Kelsey A. Mengle, Sieun Chae +1
Rutile germanium dioxide (r-GeO) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mo…
Thermal conductivity of AlN, GaN, and AlGaN alloys as a function of composition, temperature, crystallographic direction, and isotope disorder from first principles
Sahil Dagli, Kelsey A. Mengle, Emmanouil Kioupakis
Ultra-wide-band-gap group-III nitrides are of interest for applications in deep-ultraviolet optoelectronics and power electronics. Such devices must be able to efficiently dissipat…
Quasiparticle band structure and optical properties of rutile GeO, an ultra-wide-band-gap semiconductor
Kelsey A. Mengle, Sieun Chae, Emmanouil Kioupakis
Rutile GeO is a visible and near-ultraviolet-transparent oxide that has not been explored for semiconducting applications in electronic and optoelectronic devices. We investiga…
Rutile GeO2: an ultrawide-band-gap semiconductor with ambipolar doping
Sieun Chae, Jihang Lee, Kelsey A. Mengle +2
Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar doping…
Vibrational and electron-phonon coupling properties of \b{eta}-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
K. A. Mengle, E. Kioupakis
The wide band gap semiconductor \b{eta}-Ga2O3 shows promise for applications in high-power and high-temperature electronics. The phonons of \b{eta}-Ga2O3 play a crucial role in det…
First-Principles Calculations of the Near-Edge Optical Properties of \b{eta}-Ga2O3
Kelsey A. Mengle, Guangsha Shi, Dylan Bayerl +1
We use first-principles calculations based on many-body perturbation theory to investigate the near-edge electronic and optical properties of \b{eta}-Ga2O3. The fundamental band ga…