activity
20182021
most citedRutile GeO2: an ultrawide-band-gap semiconductor with ambipolar doping

103 citations · 330 across the 5 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci202173 cited

Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO

S. Chae, K. A. Mengle, K. Bushick +8

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric…

cond-mat.mtrl-sci2019

Optical properties of cubic boron arsenide

Bai Song, Ke Chen, Kyle Bushick +6

The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical pro…

cond-mat.mtrl-sci2019

Electron and hole mobility of rutile GeO from first principles: an ultrawide-band-gap semiconductor for power electronics

Kyle Bushick, Kelsey A. Mengle, Sieun Chae +1

Rutile germanium dioxide (r-GeO) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mo…

cond-mat.mtrl-sci20192 cited

Thermal conductivity of AlN, GaN, and AlGaN alloys as a function of composition, temperature, crystallographic direction, and isotope disorder from first principles

Sahil Dagli, Kelsey A. Mengle, Emmanouil Kioupakis

Ultra-wide-band-gap group-III nitrides are of interest for applications in deep-ultraviolet optoelectronics and power electronics. Such devices must be able to efficiently dissipat…

cond-mat.mtrl-sci2019

Quasiparticle band structure and optical properties of rutile GeO, an ultra-wide-band-gap semiconductor

Kelsey A. Mengle, Sieun Chae, Emmanouil Kioupakis

Rutile GeO is a visible and near-ultraviolet-transparent oxide that has not been explored for semiconducting applications in electronic and optoelectronic devices. We investiga…

cond-mat.mtrl-sci2019103 cited

Rutile GeO2: an ultrawide-band-gap semiconductor with ambipolar doping

Sieun Chae, Jihang Lee, Kelsey A. Mengle +2

Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with increasing gap. Ambipolar doping…