77 citations · 253 across the 10 of their papers we have counts for
10 papers
Extracting Atomic Environments for Machine Learning Interatomic Potentials
Jared C. Stimac, Fei Zhou, Kyle Bushick +4
In order to appropriately capture large-scale material features and emergent phenomena via atomistic simulations, such as Molecular Dynamics (MD), the system scale can range up to…
Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes
Nick Pant, Kyle Bushick, Andrew McAllister +3
The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-prin…
Electron mobility of SnO2 from first principles
Amanda Wang, Kyle Bushick, Nick Pant +6
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimenta…
Strain Effects on Auger-Meitner Recombination in Silicon
Kyle Bushick, Emmanouil Kioupakis
We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger-Meitner recombination (AMR) in silicon using first-principles calculations. We fi…
Electron-phonon physics from first principles using the EPW code
Hyungjun Lee, Samuel Poncé, Kyle Bushick +13
EPW is an open-source software for calculations of electron-phonon interactions and related materials properties. The code combines density functional perturba…
Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles
Kyle Bushick, Emmanouil Kioupakis
We present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to inve…
Perspective: Towards the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: the case of rutile GeO
S. Chae, K. A. Mengle, K. Bushick +8
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric…
Optical properties of cubic boron arsenide
Bai Song, Ke Chen, Kyle Bushick +6
The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical pro…
Boron Arsenide Heterostructures: Lattice-Matched Heterointerfaces, and Strain Effects on Band Alignments and Mobility
Kyle Bushick, Sieun Chae, Zihao Deng +2
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investiga…
Band structure and carrier effective masses of boron arsenide: effects of quasiparticle and spin-orbit coupling corrections
Kyle Bushick, Kelsey Mengle, Nocona Sanders +1
We determine the fundamental electronic and optical properties of the high-thermal-conductivity III-V semiconductor boron arsenide (BAs) using density functional and many body pert…