Strain Effects on Auger-Meitner Recombination in Silicon
arXiv:2309.09927 · doi:10.1063/5.0176950
Abstract
We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger-Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. Our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon, and can be leveraged to improve the efficiency of silicon devices.
Supplementary Material included beneath references
References in corpus (5)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Quantum ESPRESSO toward the exascale
- First-principles predictions of Hall and drift mobilities in semiconductors
- Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles