R. Blasco

activity

20182025

most citedElectrical and Optical Properties of Heavily Ge-Doped AlGaN

30 citations · 69 across the 6 of their papers we have counts for

collaborators

Showing 2019 · physics.app-phShow all

2 papers · 2 filters

physics.app-ph2019★ 14 cited

Design of n-AlInN on p-silicon heterojunction solar cells

R. Blasco, F. B. Naranjo, S. Valdueza-Felip

Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to…

physics.app-ph2019★ 8 cited

High quality Al $_{0.37}$ In $_{0.63}$ N layers grown at low temperature (<300 $^{\circ}$ C) by radio-frequency sputtering

A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3

High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…

Design of n-AlInN on p-silicon heterojunction solar cells

High quality Al0.37​In0.63​N layers grown at low temperature (<300∘C) by radio-frequency sputtering

High quality Al $_{0.37}$ In $_{0.63}$ N layers grown at low temperature (<300 $^{\circ}$ C) by radio-frequency sputtering