8 citations · 8 across the 1 of their papers we have counts for
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Design of n-AlInN on p-silicon heterojunction solar cells
R. Blasco, F. B. Naranjo, S. Valdueza-Felip
Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to…
High quality AlInN layers grown at low temperature (<300C) by radio-frequency sputtering
A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…