R. Blasco

most citedHigh quality Al

_{0.37}

_{0.63}

N layers grown at low temperature (<300

^{\circ}

C) by radio-frequency sputtering

8 citations · 8 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2018

Electrical and Optical Properties of Heavily Ge-Doped AlGaN

R. Blasco, A. Ajay, E. Robin +7

We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has…