358 citations · 846 across the 8 of their papers we have counts for
8 papers
Silicon quantum dot devices with a self-aligned second gate layer
Simon Geyer, Leon C. Camenzind, Lukas Czornomaz +5
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect la…
Ultra-Low-Power Tuning in Hybrid Barium Titanate-Silicon Nitride Electro-Optic Devices on Silicon
J. Elliott Ortmann, Felix Eltes, Daniele Caimi +5
As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network tra…
A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
Felix Eltes, Christian Mai, Daniele Caimi +10
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon…
Optomechanics with one-dimensional gallium phosphide photonic crystal cavities
Katharina Schneider, Yannick Baumgartner, Simon Hönl +5
Gallium phosphide offers an attractive combination of a high refractive index ( for vacuum wavelengths up to 4 μm) and a wide electronic bandgap (2.26 eV), enabling optical ca…
Integrated gallium phosphide nonlinear photonics
Dalziel J. Wilson, Katharina Schneider, Simon Hoenl +3
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large and $χ^…
Highly selective dry etching of GaP in the presence of AlGaP
Simon Hönl, Herwig Hahn, Yannick Baumgartner +2
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) i…
Gallium phosphide-on-silicon dioxide photonic devices
Katharina Schneider, Pol Welter, Yannick Baumgartner +3
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the fir…
Characterization of spin-orbit fields in InGaAs quantum wells
T. Henn, L. Czornomaz, G. Salis
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns…