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20112026
most citedGeneration and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

458 citations · 5.4k across the 588 of their papers we have counts for

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202 papers · 1 filter

cond-mat.mes-hall2025

Modulation of quantum geometry and its coupling to pseudo-electric field by dynamic strain

Surat Layek, Mahesh A. Hingankar, Ayshi Mukherjee +11

Two-dimensional materials are a fertile ground for exploring quantum geometric phenomena, with Berry curvature and its first moment, the Berry curvature dipole, playing a central r…

cond-mat.supr-con2025

Magnetic-Field-Driven Insulator-Superconductor Transition in Rhombohedral Graphene

Jian Xie, Zihao Huo, Zhimou Chen +5

Recent studies of rhombohedral multilayer graphene (RMG) have revealed a variety of superconducting states that can be induced or enhanced by magnetic fields, reinforcing RMG as a…

cond-mat.mes-hall2025

Entangled Moire Chern Insulator in Rhombohedral Graphene

Zaizhe Zhang, Xi Chen, Kenji Watanabe +3

Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiti…

cond-mat.mes-hall2025

Orbitally Tuned Composite-Fermion Pairing Transitions in Bilayer Graphene

Ravi Kumar, Tomer Firon, André Haug +6

The effective interaction between composite fermions, set entirely by the Coulomb potential and the underlying electronic Landau level orbitals, can stabilize exotic fractional qua…

quant-ph2025

Photoexcitation of moiré-trapped interlayer excitons via chiral phonons

A. Borel, T. V. Ivanova, J. Cervantes-Villanueva +7

Moiré superlattices in transition-metal dichalcogenide semiconductor heterobilayers enable the quantum confinement of interlayer excitons with large out-of-plane permanent electric…

cond-mat.mtrl-sci2025

Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors

Lixin Liu, Han Yan, Leyi Loh +8

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power d…