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20152019
most citedCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

317 citations · 485 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2015★ 154 cited

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Shouzhong Peng, Mengxing Wang, Hongxin Yang +9

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…