317 citations · 485 across the 5 of their papers we have counts for
5 papers
Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture
Xueying Zhang, Wenlong Cai, Mengxing Wang +6
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing.…
Magnetization dynamics modulated by Dzyaloshinskii-Moriya interaction in the double-interface spin transfer torque magnetic tunnel junction
Simin Li, Zhaohao Wang, Yijie Wang +2
Currently double-interface MTJs have been developed for enhancing the thermal stability barrier in small technology node. Dzyaloshinskii-Moriya interaction (DMI) inevitably exists…
Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques
Mengxing Wang, Wenlong Cai, Daoqian Zhu +11
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Shouzhong Peng, Mengxing Wang, Hongxin Yang +9
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…