50 citations · 87 across the 4 of their papers we have counts for
Showing 2019Show all
2 papers · 1 filter
cond-mat.mes-hall2019★ 50 cited
Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot
Xin Zhang, Rui-Zi Hu, Hai-Ou Li +11
In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to s…
cond-mat.mes-hall2019★ 11 cited
Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Ke Wang, Hai-Ou Li, Gang Luo +10
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…