activity
20132026
most citedPressure and temperature driven phase transitions in HgTe quantum wells

88 citations · 461 across the 35 of their papers we have counts for

collaborators
Showing 2018Show all

5 papers · 1 filter

cond-mat.mes-hall2018★ 9 cited

Hybridization of topological surface states with a flat band

Sergey S. Krishtopenko, Mauro Antezza, Frédéric Teppe

We address the problem of hybridization between topological surface states and a non-topological flat bulk band. Our model, being a mixture of three-dimensional Bernevig-Hughes-Zha…

cond-mat.mes-hall2018★ 17 cited

Unconventional Reentrant Quantum Hall Effect in a HgTe/CdHgTe Double Quantum Well

M. V. Yakunin, S. S. Krishtopenko, S. M. Podgornykh +7

We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a -type HgTe/CdHgTe double quantum well (DQW) consisting of two HgTe lay…

cond-mat.mes-hall2018★ 23 cited

Perspectives of HgTe Topological Insulators for Quantum Hall Metrology

Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki +16

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one , corresponding to the topological phase transition and graphen…

cond-mat.mes-hall2018★ 4 cited

Spin splitting of surface states in HgTe quantum wells

A. A. Dobretsova, Z. D. Kvon, S. S. Krishtopenko +2

We report on beating appearance in Shubnikov-de Haas oscillations in conduction band of 18-22nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals…

cond-mat.mes-hall2018★ 20 cited

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

A. Kadykov, F. Teppe, C. Consejo +12

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transi…