Quasi-HfO${}_x$/ AlO${}_y$ and AlO${}_y$/ HfO${}_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching

Pradip Basnet, Erik Anderson, Bhaswar Chakrabarti +3

Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs.…