2 papers
physics.app-ph2021
Quasi-HfO/ AlO and AlO/ HfO Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching
Pradip Basnet, Erik Anderson, Bhaswar Chakrabarti +3
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs.…
cond-mat.mtrl-sci2019
Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation
Pradip Basnet, Darshan G Pahinkar, Matthew P. West +3
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal e…