69 citations · 220 across the 10 of their papers we have counts for
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Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx
Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li +1
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particula…
Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices
Shimul Kanti Nath, Sanjoy Kumar Nandi, Assaad El-Helou +5
The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers…
Electric field and current induced electroforming modes in NbOx
Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresis…
Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity
Shuai Li, Xinjun Liu, Sanjoy Kumar Nandi +2
Current-controlled negative differential resistance has significant potential as a fundamental building block in brain-inspired neuromorphic computing. However, achieving desired n…
Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx
Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4
In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices is a…